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Volumn 40, Issue 10, 1997, Pages 201-210

Integration of ferroelectric nonvolatile memories

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; CMOS INTEGRATED CIRCUITS; FERROELECTRIC DEVICES;

EID: 0000190210     PISSN: 0038111X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article
Times cited : (26)

References (17)
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    • Evans, J.T.1    Womack, R.2
  • 3
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    • Solution Deposition of Ferroelectric Thin Films
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    • B.A. Tuttle, R.W. Schwartz, "Solution Deposition of Ferroelectric Thin Films," MRS Bulletin, Vol. 21, p. 49, June 1996.
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  • 4
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    • Sputter Synthesis of Ferroelectric Films and Heterostructures
    • June
    • O. Auciello, A.I. Kingon, S.B. Krupanidhi, "Sputter Synthesis of Ferroelectric Films and Heterostructures," MRS Bulletin, Vol. 21, p. 25, June 1996.
    • (1996) MRS Bulletin , vol.21 , pp. 25
    • Auciello, O.1    Kingon, A.I.2    Krupanidhi, S.B.3
  • 5
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    • Organometallic Chemical Vapor Deposition of Lead Zironate-Titanate Thin Films
    • M. de Keijser, P.J. van Veldhoven, G.J.M. Dormans, "Organometallic Chemical Vapor Deposition of Lead Zironate-Titanate Thin Films," Mat. Res. Soc. Symp. Proc., Vol. 310, p. 223, 1993.
    • (1993) Mat. Res. Soc. Symp. Proc. , vol.310 , pp. 223
    • De Keijser, M.1    Van Veldhoven, P.J.2    Dormans, G.J.M.3
  • 6
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    • 9 Thin Films for FeRAM Using Flash-MOCVD
    • 9 Thin Films for FeRAM Using Flash-MOCVD," Mat. Res. Soc. Symp. Proc., Vol. 415, p. 195, 1996.
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    • Ami, T.1
  • 7
    • 3643060236 scopus 로고
    • Effects of Anneal Ambients and pt Thickness on Pt/Ti and Pt/Ti/TiN Interfacial Reactions
    • J.O. Olowolafe et al., "Effects of Anneal Ambients and pt Thickness on Pt/Ti and Pt/Ti/TiN Interfacial Reactions," J. Appl. Phys., Vol. 73, p. 1764, 1993.
    • (1993) J. Appl. Phys. , vol.73 , pp. 1764
    • Olowolafe, J.O.1
  • 12
    • 21544439412 scopus 로고
    • Fatigue and Retention in Ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O Heterostructures
    • R. Ramesh et al., "Fatigue and Retention in Ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O Heterostructures," Appl. Phys. Lett., Vol. 61, p, 1537, 1992.
    • (1992) Appl. Phys. Lett. , vol.61 , pp. 1537
    • Ramesh, R.1
  • 13
    • 0030384561 scopus 로고    scopus 로고
    • Dry Etching Issues in the Integration of Ferroelectric Thin Film Capacitors
    • G.E. Menk, S.B. Desu, W. Pan, D.P. Vijay, "Dry Etching Issues in the Integration of Ferroelectric Thin Film Capacitors," Mat. Res. Soc. Symp. Proc., Vol. 433. p. 189, 1996.
    • (1996) Mat. Res. Soc. Symp. Proc. , vol.433 , pp. 189
    • Menk, G.E.1    Desu, S.B.2    Pan, W.3    Vijay, D.P.4
  • 15
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    • 3 Capacitor for Deep Sub-Micron Memory Applications
    • 3 Capacitor for Deep Sub-Micron Memory Applications," IEDM Techn. Dig., p. 695, 1996.
    • (1996) IEDM Techn. Dig. , pp. 695
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  • 16
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    • July
    • W.L. Warren, D. Dimos, R.M. Waser, "Degradation Mechanisms in Ferroelectric and High-Permittivity Perovskites," MRS Bulletin, Vol. 21, p. 40, July 1996.
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    • Warren, W.L.1    Dimos, D.2    Waser, R.M.3
  • 17
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    • Taylor, D.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.