Atomic resolution Z-contrast imaging of semiconductors

Journal of Electron Microscopy

Volumn 49, Issue 2, 2000, Pages 231-244

  Xin, Yan ^a,b   James, Edward M ^a   Browning, Nigel D ^a   Pennycook, Steve J ^b  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Atomic resolution Z contrast imaging; Semiconductors

Indexed keywords

ATOMS; CADMIUM TELLURIDE; II-VI SEMICONDUCTORS; INTERFACES (MATERIALS); SEMICONDUCTOR DEVICES; STACKING FAULTS; WIDE BAND GAP SEMICONDUCTORS;

ATOMIC RESOLUTION Z-CONTRAST IMAGING; ATOMIC-RESOLUTION; DISLOCATION CORE; FAULT DISLOCATION; INTERPRETABILITY; SEMICONDUAOR; SI SUBSTRATES; THREADING DISLOCATION; Z-CONTRAST IMAGES; Z-CONTRAST IMAGING;

III-V SEMICONDUCTORS;

EID: 0034098030     PISSN: 00220744     EISSN: None     Source Type: Journal    
DOI: 10.1093/oxfordjournals.jmicro.a023803     Document Type: Article

References (36)

1. Bullelieuwma C W T, Coene W, and Dejong A F (1991) High-resolution electron-microscopy of semiconductors and metals. Advanced Materials 3: 368-378.
2. Spence J C H (1988) Experimental High Resolution Electron Microscopy, second edition (OUP, New York).
3. Pennycook S J and Jesson D E (1990) High-resolution incoherent imaging of crystals. Phys. Rev. Lett. 64: 938-941.
4. Pennycook S J and Jesson D E (1991) High-resolution z-contrast imaging of crystals. Ultramicroscopy 37: 14-38.
5. Loane R F, Xu P, and Silcox J (1992) Incoherent imaging of zone axis crystals with ADF STEM. Ultramicrocopy 40: 121-138.
6. McGibbon A J, Pennycook S J, and Angelo J E (1995) Direct observation of dislocation core structures in CdTe/GaAs(001). Science 269: 519-521.
7. Chisholm M F, Maiti A, Pennycook S J, and Pantelides S T (1998) Atomic configurations and energetics of arsenic impurities in a silicon grain boundary. Phys. Rev. Lett. 81: 132-135.
8. Chisholm M F and Pennycook S J (1997) Z-contrast imaging of grain-boundary core structures in semiconductors. MRS Bulletin 22: 53-57.
9. Browning N D, Chisholm M F, and Pennycook S J (1993) Atomic-resolution chemical-analysis using a scanning-transmission electron-microscope. Nature 366: 143-146.
10. Batson P E (1993) Simultaneous stem imaging and electron-energy-loss spectroscopy with atomic-column sensitivity. Nature 366: 727-728.
11. Duscher G, Browning N D, and Pennycook S J (1998) Atomic column resolved electron energy-loss spectroscopy. Phys. Status Solidi A 166: 327-342.
12. Pennycook S J and Jesson D E (1992) Atomic resolution Z-contrast imaging of interfaces. Acta. Metall. Mater. 40: S149-S159.
13. Nellist P D and Pennycook S J (1999) Incoherent imaging using dynamically scattered coherent electrons. Ultramicroscopy 78: 111-124.
14. James E M, Browning N D, Nicholls A W, Kawasaki M, Xin Y, and Stemmer S (1998) Demonstration of atomic resolution Z-contrast imaging by a JEOL JEM-2010F scanning transmission electron microscope. J. Electron Microsc. 47: 561-574.
15. James E M and Browning N D (1999) Practical aspects of atomic resolution imaging and analysis in STEM. Ultramicroscopy 78: 125-139.
16. Nellist P D and Pennycook S J (1998) Subangstrom resolution by underfocused incoherent transmission electron microscopy. Phys. Rev. Lett. 81: 4156-4159.
17. Pennycook S J, Jesson D E, McGibbon AJ, and Nellist P D (1996) High angle dark field STEM for advanced materials. J. Electron Microsc. 47: 561-574.
18. Chen Y P, Sivananthan S, and Faurie J P (1993) Structure of cdte(111)b grown by mbe on misoriented si(001). J. Electron. Mater. 22: 951-957.
19. xTe and CdTe. J. Appl. Phys. 60: 1359-1363.
20. Xin Y, Browning N D, Rujirawat S, Sivananthan S, Chen Y P, Nellist P D, and Pennycook S J (1998) Investigation of the evolution of single domain, (111)B CdTe films by molecular beam epitaxy on miscut (001) Si substrate. J. Appl. Phys. 84: 4292-4299.
21. Nakamura S, Mukai T, and Senoh M (1994) 1. High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodes. J. Appl. Phys. 76: 8189-8191.
22. Nakamura S, Senoh M, Nagahama S, Iwasa N, Yamada T, Matsushita T, Kiyohu H, and Sugimoto Y (1996) InGaN-based multi-quantum-well-structure laser diodes. Jpn. J. Appl. Phys. 35: L74-L76.
23. Lester S D, Ponce F A, Craford M G, and Steigerwald D A (1995) High dislocation densities in high efficiency GaN-based light-emitting diodes. Appl. Phys. Lett. 66: 1249-1251.
24. Zheleva T S, Smith S A, Thomson D B, Gehrke T, Linthicum K J, Rajagopal P, Carlson E, Ashmawi W M, and Davis R F (1999) Pendeoepitaxy - a new approach for lateral growth of gallium nitride structures. MRS Internet J. Nitride Semiconductor Research, Suppl. 1 4: U282-U287.
25. Lee N-E, Powell R C, Kim Y-W, and Greene J E (1995) Molecular beam epitaxy of GaN(0001) utilizing NH3 and/or NH+x ions: growth kinetics and defect structure MBE of GaN(0001) utilizing NH3 and/ or NH+x ions. J. Vacuum Sci. Technol. A - Vacuum Surfaces and Films 13: 2293.
26. Xin Y, Brown P D and Humphreys C J (1997) Domain boundaries in epitaxial wurtzite GaN. Appl. Phys. Lett. 70: 1308-1310.
27. Van Y, Chisholm M F, Duscher G, Maiti A, Pennycook S J, and Pantelides S T (1998) Impurity-induced structural transformation of a MgO grain boundary. Phys. Rev. Lett. 81: 3675-3678.
28. Northrup J E (1998) Theory of the (1-210) prismatic stacking fault in GaN. Appl. Phys. Lett. 72: 2316-2318.
29. Natusch M K H, Botton G A, and Humphreys C J (1997) Developing a methodology for the electron energy-loss spectroscopy of defects in GaN. Inst. Phys. Conf. Ser. 157: 213-216.
30. Elsner J, Frauenheim T, Haugk M, Gutierrez R, Jones R, and Heggie M I (1999) Extended defects in GaN: a theoretical study, MRS Internet J. Nitride Semiconductor Research, Suppl. 1 4: U256-U262.
31. Ning X J, Chien F R, Pirouz P, Yang J W, and Khan M A (1996) Growth defects in GaN films on sapphire: the probable origin of threading dislocations. J. Mater. Res. 11: 580-592.
32. Nellist P D and Pennycook S J (1997) Accurate structure determination from image reconstruction in ADF STEM. J. Microscopy 190: 159-170.
33. Wright A F and Groddner U (1998) The effect of doping and growth stoichiometry on the core structure of a threading edge dislocation in GaN. Appl. Phys. Lett. 73: 2751-2753.
34. Vennegues P, Beaumont B, Vaille M, and Gibart P (1997) Study of open-core dislocations in GaN films on (0001) sapphire. Appl. Phys. Lett. 70: 2434-2436.
35. Chou C T, Preston A R, and Steeds J W (1992) Dislocation contrast in large-angle convergent-beam electron-diffraction patterns. Philos. Mag A 65: 863-888.
36. Kim T-J and Holloway P H (1997) Ohmic contacts to GaAs epitaxial layers. Critical Reviews in Sol. Stat. Mat. Sci. 22: 239-273.