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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 1675-1678

Electrical characterization of Si1-xGex p-metal-oxide-semiconductor channel by admittance spectroscopy

(5) Alieu, J a,b Souifi, A a Bremond, G a Bouillon, P b Skotnicki, T b

a INSTITUT DES NANOTECHNOLOGIES DE LYON (France)

b ORANGE LABS (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0011777606 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (2)

References (14)

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