Effects of hydrogen on electrical and chemical properties of low-k hydrogen silsesquioxane as an intermetal dielectric for nonetchback processes

Electrochemical and Solid-State Letters

Volumn 2, Issue 8, 1999, Pages 390-392

  Chang, T C ^a   Liu, P T ^b   Shih, F Y ^c   Sze, S M ^a,b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c Dow Corning Taiwan Inc   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; HYDROGEN; HYDROGEN BONDS; ION IMPLANTATION; MOISTURE; PERMITTIVITY; PLASMA APPLICATIONS;

HYDROGEN SILSESQUIOXANE; INTERMETAL DIELECTRICS; NONETCHBACK PROCESSES;

DIELECTRIC MATERIALS;

EID: 0032636121     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1390847     Document Type: Article

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