Evaluation and reduction of charging damage during metal etching

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1999, Pages 163-166

  Omoto, Yutaka ^a   Ono, Tetsuo ^a   Watanabe, Seiichi ^a   Yoshioka, Ken ^a   Mizutani, Tatsumi ^a   Tokunaga, Takafumi ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; ELECTRON CYCLOTRON RESONANCE; ELECTRONS; FREQUENCIES; MAGNETIC FIELDS; METALS; NETWORKS (CIRCUITS); PLASMAS; SILICON WAFERS;

BIAS FREQUENCY; BIAS POWER SOURCE; CHARGING DAMAGE; ELECTRON SHADING; INTERLAYER DIELECTRIC; MAGNETIC FIELD STRENGTH; METAL INTERCONNECTS ETCHING; TIME MODULATION BIASING;

PLASMA ETCHING;

EID: 0033322395     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (4)