Reduction of charging damage of gate oxide by time modulation bias method

International Symposium on Plasma Process-Induced Damage, P2ID, Proceedings

Volumn , Issue , 1999, Pages 167-170

  Ono, Tetsuo ^a   Oomoto, Yutaka ^a   Mizutani, Tatsumi ^a   Yoshioka, Ken ^a   Ogawa, Yoshibumi ^a   Kofuji, Naoyuki ^a   Izawa, Masaru ^a   Goto, Yasuo ^a   Kure, Tokuo ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CYCLOTRON RESONANCE; ELECTRONS; FREQUENCIES; GATES (TRANSISTOR); IONS; OXIDES; PLASMA ETCHING; PULSE MODULATION; REACTIVE ION ETCHING; SUBSTRATES;

ACCELERATED IONS; CHARGING DAMAGE; ELECTRON SHADING; GATE OXIDE; RADIO FREQUENCY BIAS; TIME MODULATION BIAS METHOD;

SEMICONDUCTING FILMS;

EID: 0033341925     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (7)