High pressure photoluminescence studies of carbon-induced germanium quantum dots grown on Si

Semiconductor Science and Technology

Volumn 15, Issue 2, 2000, Pages 155-159

  Liu, Z X ^a,b   Schmidt, O G ^a   Venkateswaran, U D ^a,c   Eberl, K ^a   Syassen, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

^b GEOPHYSICAL LABORATORY   (United States)

^c OAKLAND UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; HYDROSTATIC PRESSURE; PHONONS; PHOTOLUMINESCENCE; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SILICON CARBIDE;

CARBON-INDUCED GERMANIUM QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0033899701     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/15/2/313     Document Type: Article

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