Strain dependent growth of silicon on Ge/Si-C heterostructures

Journal of Crystal Growth

Volumn 200, Issue 3, 1999, Pages 407-413

  Butz, R ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; GERMANIUM; HETEROJUNCTIONS; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; STRAIN; SURFACES;

EPITAXY; STRAIN DEPENDENT GROWTH;

SEMICONDUCTING SILICON;

EID: 0344771119     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00053-6     Document Type: Article

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