Substrate Current in GaAs MESFET's

IEEE Transactions on Electron Devices

Volumn 26, Issue 9, 1979, Pages 1359-1361

  Shur, M S ^b  

^a School of Electrical Engineering Cornell University ^*  (United States)

^b UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0018517389     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1979.19606     Document Type: Article

References (7)

1. R. W. H. Engelmann and C. A. Liechti, “Bias dependence of GaAs and InP parameters,” IEEE Trans. Electron Devices, vol. ED-24, pp. 1288–1296, Nov. 1977.
2. K. Yamuguchi, S. Asai, and H. Kodera, “Two dimensional numerical analysis of stability criteria of GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-23, pp. 545–553, June 1976.
3. M. S. Shur, Electron. Lett., vol. 14, no. 16, pp. 521–522, Aug. 1978.
4. B. L. Gelmont and M. S. Shur, “Analytical theory of stable domains in high doped Gunn diodes,” Electron. Lett., vol. 6, no. 12, pp. 385–387, 1970.
5. L. F. Eastman, M. S. Shur, and S. Tiwari, “Design criteria of power GaAs MESFET's,” in preparation.
6. M. S. Shur, L. F. Eastman, S. Judraprawira, J. Gammel, and S. Tiwari, “Design criteria for GaAs MESFET's related to stationary high field domains,” in IEDM Dig., pp. 381–384 (Washington, DC, Dec. 1978).
7. A. Chandra and D. W. Woodard, private communication.