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Volumn 18, Issue 2, 1983, Pages 211-213

Compact dc Model of GaAs FET's for Large-Signal Computer Calculation

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0020735515     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/JSSC.1983.1051924     Document Type: Article
Times cited : (79)

References (8)
  • 3
    • 0019528218 scopus 로고
    • GaAs FET large signal model and its application to circuit design
    • Feb.
    • Y. Tajima, B. Wrona, and K. Mishima, “GaAs FET large signal model and its application to circuit design,” IEEE Trans. Electron Devices, vol. ED-28, pp. 171-175, Feb. 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 171-175
    • Tajima, Y.1    Wrona, B.2    Mishima, K.3
  • 4
    • 0018027707 scopus 로고
    • Approximation of junction field-effect transistor characteristics by a hyperbolic function
    • Oct.
    • T. Taki, “Approximation of junction field-effect transistor characteristics by a hyperbolic function,” IEEE J. Solid-State Circuits, vol. SC-13, pp. 724-726, Oct. 1978.
    • (1978) IEEE J. Solid-State Circuits , vol.SC-13 , pp. 724-726
    • Taki, T.1
  • 6
    • 0015484674 scopus 로고
    • A two-dimensional analysis of gallium arsenide junction field-effect transistors with long and short channels
    • B. Himsworth, “A two-dimensional analysis of gallium arsenide junction field-effect transistors with long and short channels,” Solid-State Electron., vol. 15, pp. 1353-1361, 1972.
    • (1972) Solid-State Electron. , vol.15 , pp. 1353-1361
    • Himsworth, B.1
  • 7
    • 25944469614 scopus 로고
    • Gunn domain formation in the saturated current region of GaAs MESFET's
    • Dec.
    • R. W. H. Engelmann and C. A. Liechti, “Gunn domain formation in the saturated current region of GaAs MESFET's,” IEDM Tech. Dig., pp. 351-354, Dec. 1976.
    • (1976) IEDM Tech. Dig. , pp. 351-354
    • Engelmann, R.W.H.1    Liechti, C.A.2
  • 8
    • 0017242029 scopus 로고
    • Two-dimensional numerical analysis of stability criteria of GaAs FET's
    • K. Yamaguchi, S. Asai, and H. Kodera, “Two-dimensional numerical analysis of stability criteria of GaAs FET's,” IEEE Trans. Electron Devices, vol. ED-23, pp. 1283-1290, 1976.
    • (1976) IEEE Trans. Electron Devices , vol.ED-23 , pp. 1283-1290
    • Yamaguchi, K.1    Asai, S.2    Kodera, H.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.