Effects of interface states on submicron GaAs metal-semiconductor field-effect transistors assessed by gate leakage current

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 13, Issue 4, 1995, Pages 1519-1525

  Ahmed, M M ^a   Ahmed, H ^a   Ladbrooke, P H ^a  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; ELECTRONS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; MESFET DEVICES; RESISTORS; TRANSCONDUCTANCE;

BOLTZMANNS CONSTANT; CURRENT TRANSPORT THEORY; DRAIN-SOURCE VOLTAGE; DRAIN-TO-SOURCE CURRENT; FRINGING FIELD; GATE LEAKAGE CURRENT; INTERFACE STATES; SHORT-CHANNEL EFFECTS; THERMIONIC EMISSION THEORY; THRESHOLD VOLTAGE SHIFT;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0029342413     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.588180     Document Type: Article

References (22)