Effects of active-channel thickness on submicron GaAs metal semiconductor field-effect transistor characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 16, Issue 3, 1998, Pages 968-971

  Ahmed, M M ^a  

^a GIK INSTITUTE OF ENGINEERING SCIENCES AND TECHNOLOGY   (Pakistan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0242359084     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590054     Document Type: Article

References (14)

1. U. K. Mishra, R. S. Beubien, M. J. Delaney, A. S. Brown, and L. H. Hacket, Technical Digest International Electron Devices Meeting 1986, p. 829.
2. H. Jaeckel, V. Graf, B. J. Van Zeghbroeck, P. Vettiger, and P. Wolf, IEEE Electron Device Lett. 7, 522 (1986).
3. K. Ohata, H. Itoh, F. Hasegawa, and Y. Fujiki, IEEE Trans. Electron Devices 27, 1029 (1980).
4. D. K. Ferry, Galliun Arsenide Technology (Howard Sams, Indianapolis, 1985).
5. H. A. Hung, G. M. Hegazi, T. T. Lee, F. R. Phelleps, J. L. Singer, and H. C. Huang, IEEE Trans. Microwave Theory Tech. 36, 1966 (1988).
6. P. H. Ladbrooke, MMIC Design GaAs FETs and HEMTs (Artech House, London, 1989).
7. H. Dambkes, W. Brokerhoff, and K. Heime, Technical Digest International Electron Devices Meeting 1983, p. 621.
8. M. J. Golio, IEEE Trans. Electron Devices 35, 839 (1988).
9. M. M. Ahmed, H. Ahmed, and P. H. Ladbrooke, J. Vac. Sci. Technol. B 13, 1519 (1995).
10. H. Fukui, Bell Syst. Tech. J. 58, 771 (1979).
11. L. F. Eastman and M. S. Shur, IEEE Trans. Electron Devices 26, 1359 (1979).
12. M. M. Ahmed, IEEE Trans. Electron Devices 44, 2031 (1997).
13. T. Enoki, S. Sugitani, and Y. Yamane, IEEE Trans. Electron Devices 37, 935 (1990).
14. J. A. Adams, I. G. Thayne, C. D. W. Wilkinson, S. P. Beaumont, N. P. Johnson, A. H. Kean, and C. R. Stanley, IEEE Trans. Electron Devices 40, 1047 (1993).