Five-parameter DC GaAs MESFET model for nonlinear circuit design

IEE Proceedings, Part G: Circuits, Devices and Systems

Volumn 139, Issue 3, 1992, Pages 325-332

  Rodriguez Tellez, J ^a   England, P J ^a  

^a UNIVERSITY OF BRADFORD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SOFTWARE - APPLICATIONS; SEMICONDUCTING GALLIUM ARSENIDE - APPLICATIONS; SEMICONDUCTOR DEVICES, MESFET - CHARACTERIZATION; SEMICONDUCTOR DEVICES, MESFET - MATHEMATICAL MODELS;

CURTICE MODEL; SCHICHMAN HODGES FIELD EFFECT TRANSISTOR MODEL;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026880625     PISSN: 09563768     EISSN: None     Source Type: Journal    
DOI: 10.1049/ip-g-2.1992.0053     Document Type: Article

References (10)