Electrical characteristics modeling of large area boron compensated 6H-SiC pn structures

Solid-State Electronics

Volumn 44, Issue 4, 2000, Pages 571-579

  Brezeanu, G ^a   Badila, M ^d   Tudor, B ^b   Godignon, P ^d   Millan, J ^d   Locatelli, M L ^d   Chante, J P ^d   Lebedev, A ^c   Savkina, N S ^c  

^a UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^b SYNOPSYS INC   (United States)

^c IOFFE INSTITUTE   (Russian Federation)

^d NONE

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC STRUCTURE; HIGH TEMPERATURE OPERATIONS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

BORON COMPENSATION; BORON DIFFUSION; FORWARD CURRENT; OPTIMAL PARAMETER EXTRACTION PROGRAM; QUASI INTRINSIC LAYER; SATURATION CURRENT; SQUARE LOW TEMPERATURE;

SILICON CARBIDE;

EID: 0033895366     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00308-1     Document Type: Article

References (14)

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