Current-voltage characteristics of large area 6H-SiC pin diodes

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 433-436

  Badila, M ^a   Tudor, B ^b   Brezeanu, Gh ^b   Locatelli, M L ^c   Chante, J P ^c   Millan, J ^d   Godignon, Ph ^d   Lebedev, A ^e   Banu, V ^f  

^a NATIONAL INSTITUTE FOR RESEARCH AND DEVELOPMENT IN MICROTECHNOLOGIES   (Romania)

^b UNIVERSITY POLITEHNICA OF BUCHAREST   (Romania)

^c UNIVERSITÉ DE LYON   (France)

^d INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^e IOFFE INSTITUTE   (Russian Federation)

^f Baneasa SA   (Romania)

Author keywords

Boron compensation; Breakdown voltage; Current voltage characteristics; Parameter extraction; Saturation currents; SiC pn junction

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; ELECTRIC CURRENTS; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DIODES; SILICON CARBIDE; SUBSTRATES;

PARAMETER EXTRACTION; SATURATION CURRENTS;

SEMICONDUCTOR JUNCTIONS;

EID: 0032659439     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00549-2     Document Type: Article

References (6)

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