Medium power, medium voltage, large area 6H-SiC pn junctions

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1998, Pages 307-310

  Chante, J P ^a   Locatelli, M L ^a   Millan, J ^a   Godignon, P ^a   Savkina, N S ^a   Glagovskii, A A ^a   Lebedev, A ^a   Badila, M ^a   Brezeanu, G ^a   Tudor, B ^a   Sorescu, M ^a   Banoiu, G ^a   Bica, G ^a   Banu, V ^a  

^a UNIVERSITÉ DE LYON   (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SINGLE CRYSTALS;

WIDE-BANDGAP SEMICONDUCTORS;

SILICON CARBIDE;

EID: 0032312990     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)