Diffusion potential of 6H-SiC p-n-structures fabricated by different techniques

Semiconductors

Volumn 30, Issue 10, 1996, Pages 975-977

  Lebedev, A A ^a   Davydov, D V ^a   Ignat'ev, K I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040645399     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (25)

1. J. A. Lely, Dt. Keram. Ges. 32, 339 (1955).
2. M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Restegaeva, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Tsvetkov, and V. E. Chelokov, Fiz. Tekh. Poluprovodn. 22, 298 (1988) [Sov. Phys. Semicond. 22, 181 (1988)].
3. M. M. Anikin, A. A. Lebedev, I. V. Popov, V. P. Restegaeva, A. M. Strel'chuk, A. L. Syrkin, Yu. M. Tairov, V. F. Tsvetkov, and V. E. Chelokov, Fiz. Tekh. Poluprovodn. 22, 298 (1988) [Sov. Phys. Semicond. 22, 181 (1988)].
4. V. A. Dmitriev, L. M. Kogan, Ya. V. Morozenko, I. V. Popov, V. S. Rodkin, and V. E. Chelnokov, Pis'ma Zh. Tekh. Fiz. 12, 385 (1986) [Sov. Phys. Tech. Phys. Lett. 12, 157 (1986)].
5. V. A. Dmitriev, L. M. Kogan, Ya. V. Morozenko, I. V. Popov, V. S. Rodkin, and V. E. Chelnokov, Pis'ma Zh. Tekh. Fiz. 12, 385 (1986) [Sov. Phys. Tech. Phys. Lett. 12, 157 (1986)].
6. J. W. Palmor, J. A. Edmond, H. S. Kong, and C. H. Carter Jr., Physica B 185, 461 (1993).
7. Yu. M. Tairov and V. F. Tsvetkov, J. Cryst. Growth 43, 209 (1974).
8. C. G. Garret and W. H. Brattain, Phys. Rev. B 19, 376 (1970).
9. S. M. Sze, Physics of Semiconductor Devices [Russian translation], Energiya, Moscow (1973).
10. J. Blackmore, Semiconductor Statistics [Russian translation], Mir, Moscow (1964).
11. a, p. 132.
12. M. Schadt, G. Pensl, R. P. Devaty, W. J. Choyke, R. Stein, and D. Setpani, Appl. Phys. Lett. 65, 3120 (1994).
13. A. A. Lebedev, M. M. Anikin, A. N. Kuznetsov, V. P. Restegaeva, N. S. Savkina, A. L. Syrkin, and V. E. Chelokov, Fiz. Tekh. Poluprovodn. 29, 1231 (1995) [Semiconductors 29, 636 (1995)].
14. A. A. Lebedev, M. M. Anikin, A. N. Kuznetsov, V. P. Restegaeva, N. S. Savkina, A. L. Syrkin, and V. E. Chelokov, Fiz. Tekh. Poluprovodn. 29, 1231 (1995) [Semiconductors 29, 636 (1995)].
15. A. A. Lebedev and V. E. Chelnokov, Diamond Films and Related Mater. 3, 1393 (1994).
16. P. A. Ivanov, Author's Abstract of Candidate's Dissertation, Leningrad (1990).
17. S. H. Hagen, A. W. C. Kemanage, and J. W. C. van der Does de Bye, J. Luminesc. 8, 18 (1973).
18. M. Ikeda, T. Hayakawa, S. Imagiwa, H. Matsunami, and T. Tanaka, Appl. Phys. Lett. 50, 8215 (1979).
19. G. A. Lomakina, Fiz. Tverd. Tela 17, 2725 (1975) [Sov. Phys. Sol. State 17, 1808 (1975)].
20. G. A. Lomakina, Fiz. Tverd. Tela 17, 2725 (1975) [Sov. Phys. Sol. State 17, 1808 (1975)].
21. W. Choyke and L. Parrik, Phys. Rev. 127, 1868 (1962).
22. V. I. Sankin, Fiz. Tverd. Tela 15, 1820 (1975) [Sov. Phys. Sol. State 15, 1191 (1975)].
23. V. I. Sankin, Fiz. Tverd. Tela 15, 1820 (1975) [Sov. Phys. Sol. State 15, 1191 (1975)].
24. W. Choyke and L. Parrik, Phys. Rev. 105, 1721 (1957).
25. J. R. Wardrop, J. Appl. Phys. 75, 4548 (1994).