Effect of boron diffusion on the high-voltage behavior of 6H-SiC p+ nn+ structures

Journal of Applied Physics

Volumn 80, Issue 9, 1996, Pages 5464-5468

  Ortolland, S ^a   Raynaud, C ^a   Chante, J P ^a   Locatelli, M L ^a   Lebedev, A A ^b   Andreev, A N ^b   Savkina, N S ^b   Chelnokov, V E ^b   Rastegaeva, M G ^b   Syrkin, A L ^c  

^a CNRS   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITÉ MONTPELLIER 2   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001435979     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.362736     Document Type: Article

References (20)

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