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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 10, 1998, Pages 5451-5456

Slow carrier relaxation among sublevels in annealed self-formed InGaAs/GaAs quantum dots

(2) Mukai, Kohki a Sugawara, Mitsuru a

a FUJITSU LABORATORIES LTD (Japan)

Author keywords

Anneal; Carrier relaxation; InGaAs GaAs; Phonon bottleneck; Quantum dot

Indexed keywords

ANNEALING; CHARGE CARRIERS; COMPUTER SIMULATION; EMISSION SPECTROSCOPY; GROUND STATE; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

CARRIER RECOMBINATION; CARRIER RELAXATION;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032181076 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.37.5451 Document Type: Article

Times cited : (22)

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