A new method for transmission electron microscope observation of grown-in defects in as-grown Czochralski silicon (111) crystals

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 10, 1997, Pages 6200-6203

  Yanase, Yoshio ^a   Ono, Toshiaki ^a   Kitamura, Takafumi ^a   Horie, Hiroshi ^a   Ochiai, Takashi ^a   Okamoto, Setsuo ^a   Tsuya, Hideki ^a  

^a SUMCO CORPORATION   (Japan)

Author keywords

Atomic force microscopy; Crystal originated particle; Czochralski silicon; Grown in defect; Laser particle counter; Transmission electron microscopy

Indexed keywords

ANODIC OXIDATION; ATOMIC FORCE MICROSCOPY; CRYSTAL DEFECTS; CRYSTAL GROWTH FROM MELT; CRYSTAL ORIENTATION; LASER APPLICATIONS; RADIATION COUNTERS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY;

LASER PARTICLE COUNTERS;

SILICON WAFERS;

EID: 0031248192     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.6200     Document Type: Article

References (9)

1. J. Ryuta, E. Morita, T. Tanaka and Y. Shimanuki: Jpn. J. Appl. Phys. 29 (1990) L1947.
2. P. Gall, J.-P. Fillard, J. Bonnafe, T. Rakotomavo, H. Rufer and H. Schwenk: Defect Control in Semiconductors (North-Holland, Amsterdam, 1990) p. 255.
3. H. Yamagishi, I. Fusegawa, N. Fujimaki and M. Katayama: Semicond. Sci. & Technol. 7 (1996) A13-1.
4. S. Umeno, S. Sadamitsu, H. Murakami, M. Hourai, S. Sumita and T. Shigematsu: Jpn. J. Appl. Phys. 32 (1993) L699.
5. M. Miyazaki, S. Miyazaki, T. Kitamura, Y. Yanase, T. Ochiai and H. Tsuya: Proc. 5th Int. Symp. Semiconductor Manufacturing (UCS, Tokyo, 1996) p. 157.
6. M. Itsumi, H. Akiya, T. Ueki, M. Tomita and M. Yamawaki: Jpn. J. Appl. Phys. 35 (1996) 812.
7. M. Miyazaki, S. Miyazaki, Y. Yanase, T. Ochiai and T. Shigematsu: Jpn. J. Appl. Phys. 34 (1995) 6303.
8. M. Kato, T. Yoshida, Y. Ikeda and Y. Kitagawara: Jpn. J. Appl. Phys. 35 (1996) 5597.
9. H. C. Day and D. R. Allee: Appl. Phys. Lett. 62 (1993) 2691.