Characterization of hole transport phenomena in AlGaAs/InGaAs HEMT's biased in impact-ionization regime

Annual Device Research Conference Digest

Volumn , Issue , 1998, Pages 36-37

  Meneghesso, G ^a   Di Carlo, A ^a   Manfredi, M ^a   Pavesi, M ^a   Canali, C ^a   Zanoni, E ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; ELECTRON TRANSITIONS; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; HETEROJUNCTIONS; IMPACT IONIZATION; IONIZATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS;

ELECTRON HOLE RECOMBINATION; HOLE TRANSPORT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0032312636     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)