Current instability and burnout of HEMT structures

Solid-State Electronics

Volumn 39, Issue 6, 1996, Pages 851-856

  Vashchenko, V A ^a   Sinkevitch, V F ^a  

^a Russia   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENT CONTROL; ELECTRIC NETWORK TOPOLOGY; ELECTRIC PROPERTIES; ELECTRON ENERGY LEVELS; ELECTRON TRANSITIONS; MESFET DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; STABILITY;

AVALANCHE GENERATION RATE; AVALANCHE INJECTION CONDUCTIVITY MODULATION; BURNOUT; CURRENT INSTABILITY; DRAIN VOLTAGE; HIGH ELECTRON MOBILITY TRANSISTOR STRUCTURES; HOLE; NEGATIVE DIFFERENTIAL CONDUCTIVITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0030167484     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00404-1     Document Type: Article

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