Monte Carlo simulation of impact ionisation in MESFETs

Electronics Letters

Volumn 33, Issue 7, 1997, Pages 639-640

  Dunn, G M ^a   Rees, G J ^b   David, J P R ^b  

^a LOUGHBOROUGH UNIVERSITY   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Impact ionisation; MESFET

Indexed keywords

CIRCUIT OSCILLATIONS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN OF SOLIDS; IONIZATION OF SOLIDS; LIMITED SPACE CHARGE ACCUMULATION; MONTE CARLO METHODS; SEMICONDUCTOR DEVICE MODELS;

ACCUMULATION LAYERS; IMPACT IONIZATION;

MESFET DEVICES;

EID: 0031094658     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970424     Document Type: Article

References (8)

1. YAMAMOTO, R., HIGASHISAKA, A., and HASEGAWA, F.: 'Light emission and burn-out characteristics of GaAs power MESFETs', IEEE Trans., 1978, ED-25, pp. 567-
2. FURUTSUKA, T., TSUJI, T., and HASEGAWA, F.: 'Improvement of the drain breakdown voltage of GaAs power MESFETs by a simple recess structure', IEEE. Trans., 1978, ED-25, pp. 563-
3. WEMPLE, S.H., and NIEHAUS, W.C: 'Source-drain burnout in GaAs MESFETs'. Proc. 1976 Int. Symp. North Amer. Conf. on GaAs and Related compounds, 1976. pp. 262-
4. VAHCHENKO, V.A., KOZLOV, N.A., MARTYNOV, Y.B., SINKEVITCH, V.F., and TAGER, A.S.: 'Negative differential conductivity and isothermal drain breakdown of the GaAs MESFETs'. IEEE Trans. Electron. Device, 1996, 43, pp. 513
5. MILES, R.E., and LI, : 'The effect of material quality and temperature on avalanche breakdown in GaAs MESFETs'. ISCS.23, 23rd Int. Symp. Compound Semiconductors, 1996, (IOP Publishing)
6. YAMAGUCHI, K., ASAI, S., and KODERA, H.: Two-dimensional anlysis of stability criteria of GaAs FETs', IEEE Trans., 1976, ED-23, pp. 1283-
7. MOGLESTUE, C.: 'Monte Carlo particle study of transport along the hetero interface in a field effect transistor', Appl. Phys., 1991, pp. 2435-
8. DUNN, G.M., REES, G., and DAVID, J.: 'Monte Carlo simulation of high field transport and impact ionization in GaAs diodes', IEEE Trans. Electron Device., December 1996