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Volumn 54, Issue 1, 1983, Pages 260-267
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The effect of interfacial traps on the stability of insulated gate devices on InP
a a |
Author keywords
[No Author keywords available]
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Indexed keywords
SEMICONDUCTING INDIUM COMPOUNDS;
INDIUM PHOSPHIDE;
TRANSISTORS, FIELD EFFECT;
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EID: 0020497563
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.331695 Document Type: Article |
Times cited : (72)
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References (31)
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