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Volumn 54, Issue 1, 1983, Pages 260-267

The effect of interfacial traps on the stability of insulated gate devices on InP

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0020497563     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.331695     Document Type: Article
Times cited : (72)

References (31)
  • 20
    • 84952283219 scopus 로고    scopus 로고
    • Although [formula omitted] was present during oxide growth, it is not clear that decomposition proceeded at any reasonable rate and thus that significant levels of P were necessarily incorporated in the [formula omitted] layers.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.