l/f NOISE IN GaAs MESFETs.

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1983, Pages 601-604

  Su, Chung yi ^a   Rohdin, Hans ^a   Stolte, Charles ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

FREE SURFACE REGION; LF NOISE AND GATE LENGTH; METAL-SEMICONDUCTOR INTERFACE; MOBILITY FLUCTUATION IN NEUTRAL CHANNEL; ORIGIN OF LOW FREQUENCY NOISE; TRAPS IN MESFET DEPLETION REGION;

TRANSISTORS, FIELD EFFECT;

EID: 0020892421     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (0)