A simple interfacial-layer model for the nonideal I-V and C-V characteristics of the Schottky-barrier diode

Solid State Electronics

Volumn 30, Issue 4, 1987, Pages 383-390

  Tseng, Hsun Hua ^a   Wu, Ching Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES - MODELING;

DENSITY DISTRIBUTION; GENERATION-RECOMBINATION MECHANISM; INTERFACE STATES; INTERFACIAL-LAYER MODEL; SCHOTTKY-BARRIER DIODE;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0023328678     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(87)90166-3     Document Type: Article

References (16)

1. A simple model for computer simulation of Schottky-barrier diodes
2. A study of interface states in metal-GaAs 〈110〉 structures by Schottky capacitance spectroscopy
3. Modeling and characterization of dopant redistributions in metal and silicide contacts
4. The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance Technique