Electrical characteristics of GaAs MIS Schottky diodes

Solid State Electronics

Volumn 22, Issue 7, 1979, Pages 621-631

  Ashok, S ^a   Borrego, J M ^a   Gutmann, R J ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES;

SEMICONDUCTOR DEVICES, SCHOTTKY BARRIER;

EID: 0018495795     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(79)90135-7     Document Type: Article

References (44)

1. Electrical Properties of Metal-GaAs Schottky Barrier Contacts
2. Electrical properties of nickel-low-doped n-type gallium arsenide Schottky-barrier diodes
3. A note on the evaluation of Schottky diode parameters in the presence of an interfacial layer
4. Technology of GaAs metal—Oxide—Semiconductor solar cells
5. On the origin of the increase in Schottky barrier height with interfacial oxide thickness