(Ba, Sr)TiO3 films prepared by liquid source chemical vapor deposition on Ru electrodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 9 SUPPL. B, 1996, Pages 4880-4885

  Kawahara, Takaaki ^a   Yamamuka, Mikio ^a   Yuuki, Akimasa ^a   Ono, Kouichi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

BST; Capacitor; DRAM; Liquid source CVD; Ru; Storage node; Two step deposition

Indexed keywords

LIQUID SOURCE; STORAGE NODE; TWO-STEP DEPOSITION;

CAPACITORS; CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; ELECTRODES; EXPERIMENTS; RUTHENIUM;

METALLIC FILMS;

EID: 0030231618     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.4880     Document Type: Article

References (16)

1. Y. Nishioka, K. Shiozawa, T. Ohishi, K. Kanamoto, Y. Tokuda, H. Sumitani, S. Aya, H. Yabe, K. Itoga, T. Hifumi, K. Marumoto, T. Kuroiwa, T. Kawahara, K. Nishikawa, T. Oomori, T. Fujino, S. Yamamoto, S. Uzawa, M. Kimata, M. Nunoshita and H. Abe: Dig. Int. Electron Devices Meeting, Washington D.C., 1995 (IEEE, New York, 1995) p. 903.
2. A. Yuuki, M. Yamamuka, T. Makita, T. Horikawa, T. Shibano, N. Hirano, H. Maeda, N. Mikami, K. Ono, H. Ogata and H. Abe: Dig. Int. Electron Devices Meeting, Washington D.C., 1995 (IEEE, New York, 1995) p. 115.
3. S. Yamamichi, P-Y. Lesaicherre, H. Yamaguchi, K. Takemura, S. Sone, H. Yabuta, K. Sato, T. Tamura, K. Nakajima, S. Ohnishi, K. Tokashiki, Y. Hayashi, Y. Kato, Y. Miyasaka, M. Yoshida and H. Ono: Dig. Int. Electron Devices Meeting, Washington D.C., 1995 (IEEE, New York, 1995) p. 119.
4. K. P. Lee, Y. S. Park, J-Y. Lee, K. Y. Lee, J. Kim, J. K. Park, B. Roh, B. Kim, D. Ko, C. Hwang, C. Kang, J. G. Lee, K. Kim, J. W. Park and J. H. Lee: Dig. Int. Electron Devices Meeting, Washington D.C., 1995 (IEEE, New York, 1995) p. 907.
5. P. V. Buskirk, S. M. Bilodeau, J. F. Roeder and P. S. Kirlin: Jpn. J. Appl. Phys. 35 (1996) 2520.
6. T. Kawahara, M. Yamamuka, T. Makita, J. Naka, A. Yuuki, N. Mikami and K. Ono: Jpn. J. Appl. Phys. 33 (1994) 5129.
7. T. Kawahara, M. Yamamuka, A. Yuuki and K. Ono: Jpn. J. Appl. Phys. 34 (1995) 5077.
8. K. Kashihara, T. Okudaira, H. Itoh, T. Higaki and H. Abe: 1993 Symp. VLSI Tech. Dig. (1993) p. 49.
9. M. Shimizu, M. Sugiyama, H. Fujisawa and T. Shiosaki: Jpn. J. Appl. Phys. 33 (1994) 5167.
10. A. Grill, W. Kane, J. Viggiano, M. Brady and R. Laibowitz: J. Mater. Res. 7 (1992) 3260.
11. H. N. Al-Shareef, K. R. Bellur, O. Auciello and A. I. Kingon: Ferroelectrics 152 (1994) 85.
12. H. N. Al-Shareef, A. I. Kingon, X. Chen, K. R. Bellur and O. Auciello: J. Mater. Res. 9 (1994) 2975.
13. H. N. Al-Shareef, K. R. Bellur, A. I. Kingon and O. Auciello: Appl. Phys. Lett. 66 (1995) 239.
14. K. Takemura, T. Sakuma and Y. Miyasaka: Appl. Phys. Lett. 64 (1994) 2967.
15. T. Shibano, M. Matsushita, K. Nakamura and T. Oomori: Ext. Abstr. 43rd Spring Meet. the Japan Society of Applied Physics, Asaka, March, 1996, 28a-ZV-10 [in Japanese].
16. M. Yamamuka, T. Kawahara, A. Yuuki and K. Ono: Jpn. J. Appl. Phys. 35 (1996) 2530.