Status of the surface and bulk parasitic effects limiting the performances of GaAs IC's

Physica B+C

Volumn 129, Issue 1-3, 1985, Pages 119-138

  Rocchi, Marc ^a  

^a PHILIPS RESEARCH LABORATORIES   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LOGIC CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

ELECTRICAL ISOLATION; FREQUENCY DEPENDENCE; I-V CHARACTERISTICS; PARASITIC EFFECTS;

INTEGRATED CIRCUITS;

EID: 46549097439     PISSN: 03784363     EISSN: None     Source Type: Journal    
DOI: 10.1016/0378-4363(85)90559-5     Document Type: Article

References (42)

1. Schottky barrier gate field effect transistor
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3. High-speed GaAs MSI
4. A high-speed LSI GaAs 8 × 8 bit parallel multiplier
5. Direct experimental comparison of submicron GaAs and SiNMOS
6. Effects of deep centers on microwave frequency characteristics of GaAs schottky barrier gate FET
7. Les matériaux GaAs semi-isolants : paramètres essentiels et méthodes de caractérisation
8. Direct observation of dislocation effects on threshold voltage of GaAs field-effect-transistor
9. Etats électroniques de surface-interaction metal GaAs, étude de leurs contributions aux propriétés de l'interface et de la barrière Schottky
10. Multilayer epitaxial technology for the Schottky-barrier GaAs field-effect transistor
11. Sub-micron gate GaAs MESFET's with ion-implanted channels
12. Influence des défauts de surface sur le comportement des MESFET GaAs
13. m Frequency Dispersion measurement of Transconductance
14. Effects parasites dans les transistors à effect de champ en GaAs : rôles de la surface et du substrat semi-isolant
15. Electrical properties of the interface between an n-GaAs epitaxial layer and a Cr-doped substrate
16. Influence of substrates on the electrical properties of GaAs FET devices
17. m frequency dispersion measurement
18. A new side-gating model for GaAs MESFET's based on surface avalanche breakdown
19. Influence des problèmes de surface sur les paramètres électriques des FET's AsGa
20. Anomalies de fonctionnement des MESFET : influence des porteurs minoritaires
21. Defect clustering phenomena and related hopping type conduction in GaAs and near its surface
22. Ultra-low power, high speed GaAs 256 bit static RAM
23. FET Arrays on In-Alloyed GaAs Substrates
24. Orientation effect reduction through capless annealing of self-aligned planar GaAs schottky barrier field-effect transistors
25. Influence of the surface and the episubstrate interface on the drain current drift of GaAs MESFET's
26. The effect of backgating on the design and performance of GaAs digital integrated circuits
27. Modeling of backgating effects on GaAs digital integrated circuits
28. Design of GaAs 1 K bit static RAM
29. GaAs enhancement/depletion MESFET memory technology
30. Threshold voltage scattering of GaAs MESFET's fabricated on LEC-grown semi-insulating substrates
31. Uniformity evaluation of MESFET's for GaAs LSI fabrication
32. Low frequency noise in GaAs MESFET's
33. 1/f noise in GaAs MESFET's
34. Wideband high gain small size monolithic GaAs FET amplifiers
35. N-on versus N-off GaAs MESFET's for ultra high dopped comparator