Analysis of Surface State Effect on Gate Lag Phenomena in GaAs MESFET’s

IEEE Transactions on Electron Devices

Volumn 41, Issue 9, 1994, Pages 1504-1512

  Lee, Chien Ping ^b  

^a NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRONS; GATES (TRANSISTOR); MATHEMATICAL MODELS; MODULATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING; SPECTROSCOPY; TRANSCONDUCTANCE;

GATE LAG PHENOMENA; HOLE TRAP LIKE; SURFACE CHARGE DENSITY; SURFACE STATE EFFECT; TWO DIMENSIONAL TRANSIENT SIMULATION;

MESFET DEVICES;

EID: 0028513793     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.310100     Document Type: Article

References (17)

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