Simplified Simulations of GaAs MESFET's with Semi-Insulating Substrate Compensated by Deep Levels

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 10, Issue 10, 1991, Pages 1295-1302

  Horio, Kazushige ^a   Fuseya, Yasuji ^a   Kusuki, Hiroyuki ^a   Yanai, Hisayoshi ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

CURRENT-VOLTAGE CHARACTERISTICS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026238426     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.88925     Document Type: Article

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