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Journal of Applied Physics

Volumn 51, Issue 5, 1980, Pages 2840-2852

Compensation mechanisms in GaAs

(5) Martin, G M a Farges, J P a Jacob, G a Hallais, J P a Poiblaud, G b

a PHILIPS RESEARCH LABORATORIES (Germany)

b RTC La Radiotechnique Compelec ^* (France)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0019010978 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.327952 Document Type: Article

Times cited : (285)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.