Analysis of surface-related deep-trap effects on gate-lag phenomena in GaAs MESFETs

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 1996, Pages 175-178

  Horio, K ^a   Yamada, T ^a  

^a SHIBAURA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRON ENERGY LEVELS; GATES (TRANSISTOR); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DEVICE STRUCTURES; SURFACE PHENOMENA;

GATE LAG PHENOMENA; SURFACE STATE DENSITY;

MESFET DEVICES;

EID: 0030393436     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)