Enhanced SiGe heterojunction bipolar transistors with 160 GHz-fmax

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1995, Pages 743-746

  Schueppen, A ^a   Erben, U ^a   Gruhle, A ^a   Kibbel, H ^a   Schumacher, H ^a   Koenig, U ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHROMIUM; ETCHING; GOLD; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; OHMIC CONTACTS; OSCILLATIONS; PLATINUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SUBSTRATES;

CONTACT RESISTANCE; GROOVE ETCHING TECHNIQUE; MAXIMUM TRANSIT FREQUENCY; METALLIZATION SYSTEM; MINIMUM NOISE FIGURE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029491472     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)