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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 371, Issue 3, 1996, Pages 575-577

A microscopic explanation for type inversion and the annealing behaviour of radiation damaged silicon detectors

(5) Matheson, J a Robbins, M a,c Watts, S a Hall, G b MacEvoy, B b

a BRUNEL UNIVERSITY (United Kingdom)

b IMPERIAL COLLEGE LONDON (United Kingdom)

c E2V TECHNOLOGIES (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; IRRADIATION; LEAKAGE CURRENTS; NEUTRONS; PHOSPHORUS; RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS;

BAND GAP; LARGE HADRON COLLIDER; NEUTRON FLUENCE; PHOSPHOROUS REMOVAL RATE; POISSON EQUATION; SILICON DETECTORS; TYPE INVERSION; VACANCY PHOSPHOROUS COMPLEXES;

RADIATION DETECTORS;

EID: 0030108025 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/0168-9002(95)01435-7 Document Type: Article

Times cited : (7)

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