Temperature effects in silicon avalanche diodes

Solid State Electronics

Volumn 17, Issue 1, 1974, Pages 99-106

  Conradi, J ^a  

^a FCA UNESP   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES, PHOTODIODE - TEMPERATURE EFFECT;

SEMICONDUCTOR DIODES, AVALANCHE;

EID: 0015956781     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(74)90118-X     Document Type: Article

References (23)

1. High-speed photodiode signal enhancement at avalanche breakdown voltage
2. A model of the avalanche photodiode
3. An optimized avalanche photodiode
4. Recent Results Obtained with High Field, Internally Amplifying Semiconductor Radiation Detectors
5. Multiplication noise in uniform avalanche diodes
6. The distribution of gains in uniformly multiplying avalanche photodiodes: Theory
7. Low-frequency noise measurements in silicon avalanche photodiodes
8. Measurements of multiplication effects on noise in silicon avalanche diodes
9. Noise Characteristics in Silicon Photodiodes
10. The distribution of gains in uniformly multiplying avalanche photodiodes: Experimental
11. Avalanche breakdown of diffused silicon p-n junctions
12. Microplasmas in Siliconp-nJunctions
13. Temperature dependence of breakdown voltage in silicon abrupt p-n junctions