SCOPUS 정보 검색 플랫폼

Surface Review and Letters

Volumn 7, Issue 3, 2000, Pages 307-331

Near edge X-ray absorption and X-ray photoelectron diffraction studies of the structural environment of Ge-Si systems

(6) Castrucci, P a Gunnella, R a Pinto, N a Bernardini, R a De Crescenzi, M a Sacchi, M b

a UNIVERSITY OF CAMERINO (Italy)

b UNIVERSITÉ PARIS SACLAY (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTIMONY; GERMANIUM; SILICON; SURFACTANT;

CHEMICAL STRUCTURE; CRYSTALLIZATION; ELECTRON DIFFRACTION; PHASE TRANSITION; REVIEW; SOLID; SURFACE PROPERTY; THERMODYNAMICS; X RAY DIFFRACTION; X RAY SPECTROMETRY;

EID: 0033813987 PISSN: 0218625X EISSN: None Source Type: Journal
DOI: 10.1016/S0218-625X(00)00028-2 Document Type: Review

Times cited : (3)

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