Random adatom heights in Ge/Si(111)-5 × 5 surfaces

Surface Science

Volumn 351, Issue 1-3, 1996, Pages 103-110

  Fukuda, T ^a  

^a NTT Basic Research Laboratories   (Japan)

Author keywords

Chemisorption; Epitaxy; Germanium; Low index single crystal surfaces; Molecular beam epitaxy; Scanning tunneling microscopy; Scanning tunneling spectroscopies; Semiconductor semiconductor thin film structures; Silicon; Surface structure

Indexed keywords

CHEMICAL BONDS; CHEMISORPTION; FERMI LEVEL; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SINGLE CRYSTALS; SUBSTRATES; SURFACE STRUCTURE; THIN FILMS;

DANGLING BONDS; LOW INDEX SINGLE CRYSTAL SURFACES; RANDOM ADATOM HEIGHTS; SCANNING TUNNELING SPECTROSCOPY;

SEMICONDUCTING FILMS;

EID: 0030146990     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/0039-6028(95)01261-3     Document Type: Article

References (26)

1. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502; K. Takayanagi, Y. Tanishiro, S. Takahashi and M. Takahashi, Surf. Sci. 164 (1985) 367.
2. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi, J. Vac. Sci. Technol. A 3 (1985) 1502; K. Takayanagi, Y. Tanishiro, S. Takahashi and M. Takahashi, Surf. Sci. 164 (1985) 367.
3. H.-J. Gossmann, J.C. Bean, L.C. Feldman and W.M. Gibson, Surf. Sci. 138 (1984) L175.
4. K. Shoji, M. Hyodo, H. Ueba and C. Tatsuyama, Jpn. J. Appl. Phys. 22 (1983) 1482.
5. K. Kajiyama, Y. Tanishiro and K. Takayanagi, Surf. Sci. 222 (1989) 47.
6. T. Ichikawa and S. Ino, Surf. Sci. 136 (1984) 267.
7. P.M.J. Marée, K. Nakagawa, F.M. Mulders, J.F. Van der Veen and K.L. Kavanagh, Surf. Sci. 191 (1987) 305.
8. T. Narusawa and W.M. Gibson, Phys. Rev. Lett. 47 (1981) 1459; T. Narusawa and W.M. Gibson, J. Vac. Sci. Technol. 20 (1982) 709.
9. T. Narusawa and W.M. Gibson, Phys. Rev. Lett. 47 (1981) 1459; T. Narusawa and W.M. Gibson, J. Vac. Sci. Technol. 20 (1982) 709.
10. J.A. Kubby and W.J. Greene, J. Vac. Sci. Technol. A 10 (1992) 1935.
11. U. Köhler, O. Jusko, G. Pietsch, B. Müller and M. Henzler, Surf. Sci. 248 (1991) 321.
12. See Fig. 3 in Ref. [10].
13. A. Ishizaka and Y. Shiraki, J. Electrochem. Soc. 133 (1986) 666.
14. G. Binig, H. Rohrer, Ch. Gerber and E. Weibel, Phys. Rev. Lett. 50 (1983) 120.
15. R.S. Becker, J.A. Golovchenko, D.R. Hamann and B.S. Swratentruber, Phys. Rev. Lett. 55 (1985) 2032.
16. R.S. Becker, B.S. Swartzentruber, J.S. Vickers and T. Klitsner, Phys. Rev. B 39 (1989) 1633.
17. R. Walkow and Ph. Avouris, Phys. Rev. Lett. 60 (1988) 1049.
18. E.S. Hirschron, D.S. Lin, F.M. Leibsle, A. Samsavar and T.-C. Chiang, Phys. Rev. B 44 (1991) 1403.
19. K. Higashiyama, S.K. Lewis, R.X. Ynzunza, E.D. Tober, Y. J. Kim and C.S. Fadley, Surf. Sci. 291 (1993) 47.
20. N. Takeuchi, A. Selloni and E. Tosatti, Phys. Rev. Lett. 69 (1992) 648.
21. P.N. Keating, Phys. Rev. 145 (1966) 637.
22. G.-X. Qian and D.J. Chadi, Phys. Rev. B 35 (1987) 1288.
23. K. Sumitomo, T. Nishioka, N. Shimizu and T. Ogino, J. Vac. Sci. Technol. A 13 (1995) 289.
24. L. Pauling, in: The Nature of the Chemical Bond, 3rd ed. (Cornell University Press, New York, 1960) p. 85, We used an average bonding energy between Si-Si and Ge-Ge.
25. K. Takayanagi, Y. Tanishiro and K. Kajiyama, J. Vac. Soc. Technol. B 4 (1984) 1075, and references therein.
26. R.D. Meade and D. Vanderbilt, Phys. Rev. B 40 (1989) 3905.