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Volumn 60, Issue 8, 1999, Pages 5759-5769

Electronic density of empty states of Ge/Si(111) epitaxial layers: Theory and experiment

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EID: 0000484683     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.5759     Document Type: Article
Times cited : (18)

References (25)
  • 1
    • 0004237782 scopus 로고
    • R. Gomer, Springer Series in Surface Science, Springer-Verlag, Berlin
    • J. Stöhr, in NEXAFS spectroscopy, edited by R. Gomer, Springer Series in Surface Science Vol. 25 (Springer-Verlag, Berlin, 1992).
    • (1992) NEXAFS Spectroscopy , vol.25
    • Stöhr, J.1
  • 22
    • 0003518237 scopus 로고
    • J. C. Fuggle and J. E. Inglesfield, Topics in Applied Physics, Springer-Verlag, Berlin
    • fı. Al Shamma, M. Abbate, and J. C. Fuggle, in Unoccupied Electronic States, edited by J. C. Fuggle and J. E. Inglesfield, Topics in Applied Physics Vol. 69 (Springer-Verlag, Berlin, 1992), p. 348.
    • (1992) Unoccupied Electronic States , vol.69 , pp. 348
    • Al Shamma, F.I.1    Abbate, M.2    Fuggle, J.C.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.