RHEED intensity oscillations observed during growth of Ge on Si(111) substrates

Surface Science

Volumn 369, Issue 1-3, 1996, Pages 91-98

  Daniluk, A ^a   Mazurek, P ^a   Mikolajczak P ^a  

^a MARIA CURIE SK ODOWSKA UNIVERSITY   (Poland)

Author keywords

Germanium; Growth; Molecular beam epitaxy; Reflection high energy electron diffraction (RHEED); Scattering potential; Schr dinger equation; Silicon

Indexed keywords

ELECTRON SCATTERING; FILM GROWTH; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; OSCILLATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTING SILICON; SUBSTRATES; SURFACE STRUCTURE; THERMAL EFFECTS; THIN FILMS;

INTENSITY OSCILLATIONS; SCATTERING POTENTIAL; SCHRODINGER EQUATION; STRANSKI KRASTANOV GROWTH;

SEMICONDUCTING GERMANIUM;

EID: 0030380222     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)00924-7     Document Type: Article

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