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Volumn 12, Issue 6, 2000, Pages 1536-1548

Disorder-order transition in mesoscopic silica thin films

Author keywords

[No Author keywords available]

Indexed keywords

SILICON DIOXIDE; SURFACTANT;

EID: 0033803606     PISSN: 08974756     EISSN: None     Source Type: Journal    
DOI: 10.1021/cm000038a     Document Type: Article
Times cited : (55)

References (46)
  • 33
    • 0000742620 scopus 로고    scopus 로고
    • Regev, O. Langmuir 1996, 12, 4940.
    • (1996) Langmuir , vol.12 , pp. 4940
    • Regev, O.1
  • 37
    • 0342472395 scopus 로고    scopus 로고
    • note
    • We carefully compared SAED patterns obtained at both temperatures to verify that a temperature-induced phase change did not occur. No variations in crystal structure and symmetry were found.
  • 39
    • 0343341872 scopus 로고    scopus 로고
    • note
    • We found that film regrowth could be initiated by adding additional TEOS to the system.
  • 44
    • 0342906791 scopus 로고
    • Properties and Process Development in Glass-Ceramic Materials; in Glass: Current Issues
    • Wright, A. F., Dupuy, J., Eds.; M. Nijhoff
    • Beall, G. H. Properties and Process Development in Glass-Ceramic Materials; in Glass: Current Issues; Wright, A. F., Dupuy, J., Eds.; NATO ASI Series, Series E: Applied Sciences- No. 92; M. Nijhoff, 1985; pp 21-48.
    • (1985) NATO ASI Series, Series E: Applied Sciences- No. 92 , vol.92 , pp. 21-48
    • Beall, G.H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.