High microwave power electron cyclotron resonance etching of III-V semiconductors in CH4/H2/Ar

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 1, 1996, Pages 118-125

  Pearton, S J ^a   Lee, J W ^a   Lambers, E S ^a   Mileham, J R ^a   Abernathy, C R ^a   Hobson, W S ^b   Ren, F ^b   Shul, R J ^c  

^a UNIVERSITY OF FLORIDA   (United States)

^b LUCENT TECHNOLOGIES   (United States)

^c SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001449108     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589037     Document Type: Article

References (23)

1. U. Niggebrugge, M. Klug, and G. Garus, Inst. Phys. Conf. Ser. 79, 367 (1985).
2. T. R. Hayes, M. Dreisbach, P. Thomas, W. C. Dautremont-Smith, and L. Heimbrook, J. Vac. Sci. Technol. B 7, 1130 (1989).
3. S. J. Pearton, U. K. Chakrabarti, and W. S. Hobson, J. Appl. Phys. 66, 2061 (1989).
4. G. F. McLane, M. W. Cole, D. W. Eckart, P. Cooke, R. Moerkirk, and M. Meyyappan, J. Vac. Sci. Technol. A 11, 1753 (1993).
5. D. Lecrosnier, L. Henry, A. LeCorre, and C. Vaudry, Electron. Lett. 23, 1254 (1987).
6. T. Matsui, H. Sugimoto, T. Ohnishi, and H. Ogata, Electron. Lett 24, 798 (1988).
7. R. Cheung, S. Thomas, I. McIntyre, C. D. W. Wilkinson, and S. P. Beaumont, J. Vac. Sci. Technol. B 5, 1911 (1988).
8. S. J. Pearton, W. S. Hobson, F. A. Baiocchi, A. B. Emerson, and K. S. Jones, J. Vac. Sci. Technol. B 8, 57 (1990).
9. S. J. Pearton, U. K. Chakrabarti, A. P. Kinsella, D. Johnson, and C. Constantine, Appl. Phys. Lett. 56, 1424 (1990).
10. C. Constantine. D. Johnson, S. J. Pearton, U. K. Chakrabarti, A. B. Emerson, W. S. Hobson, and A. P. Kinsella, J. Vac. Sci. Technol. B 8, 596 (1990).
11. R. J. Shul, R. P. Schneider, and C. Constantine, Electron. Lett. 30, 817 (1994).
12. C. Youtsey, R. Grundbacher, R. Panepucci, I. Adesida, and C. Caneau, J. Vac. Sci. Technol. B 12, 3317 (1994).
13. R. Khare, J. Brown, M. Hu, D. Pierson, M. Melendes, and C. Constantine, J. Vac. Sci. Technol. B 12, 2947 (1994).
14. K. Y. Hur, B. J. Guerin, and T. E. Kazior, J. Vac. Sci. Technol. 12, 1410 (1994).
15. S. J. Pearton, T. Nakano, and R. A. Gottscho, J. Appl. Phys. 69, 4206 (1991).
16. D. L. Melville, J. G. Simmons, and D. A. Thompson, J. Vac. Sci. Technol. B 11, 2038 (1993).
17. H. Schmidt, Proceedings of the 6th International Conference on Ion and Plasma Assisted Techniques Brighton, UK, 1987 (IOP, Bristol, 1987), p. 98.
18. P. Collot, T. Diallo, and J. Canteloup, J. Vac. Sci. Technol. B 9, 2497 (1991).
19. H. E. G. Arnot, R. W. Glew, G. Schiavini, L. J. Rigby, and A. Piccirillo, Appl. Phys. Lett. 62, 3189 (1993).
20. V. J. Law and G. A. C. Jones, Semicond. Sci. Technol. 7, 281 (1992).
21. C. Constantine, C. Barratt, S. J. Pearton, F. Ren, and J. R. Lothian, Appl. Phys. Lett. 61, 2899 (1992).
22. S. Thomas, K. K. Ko, and S. W. Pang, J. Vac. Sci. Technol. A 13, 894 (1995).
23. F. Ren, J. R. Lothian, W. S. Hobson, J. Lopata, J. Caballero, and S. J. Pearton, Appl. Phys. Lett. 67, 2497 (1995).