Impurity diffusion in silicon based on the pair diffusion model and decrease in quasi-vacancy formation energy. Part two: Arsenic

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 1 A, 1996, Pages 44-55

  Yoshida, Masayuki ^a,c   Arai, Eisuke ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b NTT CORPORATION   (Japan)

^c Yoshida Semiconductor Laboratory   (Japan)

Author keywords

Arsenic; Binding energy; Decrease in quasi vacancy formation energy; E center; Impurity vacancy pair; Pair diffusion model; Silicon

Indexed keywords

ARSENIC; ATOMS; BINDING ENERGY; CRYSTAL IMPURITIES; ELECTRON ENERGY LEVELS; FERMI LEVEL; MATHEMATICAL MODELS; NUMERICAL METHODS; PHOSPHORUS; SEMICONDUCTING SILICON; STATISTICS;

DIFFUSION EQUATION; IMPURITY DIFFUSION; MIGRATION ENERGY; PAIR DIFFUSION MODEL; QUASI-VACANCY FORMATION ENERGY;

DIFFUSION;

EID: 0029754430     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.35.44     Document Type: Article

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