Fast metal diffusion in silicon under intrinsic and extrinsic doping conditions

Defect and Diffusion Forum

Volumn 143-147, Issue , 1997, Pages 979-992

  Bracht, H ^a  

^a UNIVERSITY OF MÜNSTER   (Germany)

Author keywords

Diffusion; Fermi level effect; Gold; Kick out mechanism; Radiotracer; Self interstitials; Silicon; Spreading resistance; Zinc

Indexed keywords

DIFFUSION; DIFFUSION IN LIQUIDS; DIFFUSION IN SOLIDS; GOLD; METALS; POINT DEFECTS; SILICON; ZINC;

DIFFUSION EXPERIMENTS; EFFECTIVE DIFFUSION COEFFICIENTS; EQUILIBRIUM CONCENTRATION; NATIVE POINT DEFECTS; RADIOTRACER; SELF INTERSTITIALS; SELF-DIFFUSION COEFFICIENTS; SPREADING RESISTANCE;

NEUTRON ACTIVATION ANALYSIS;

EID: 4244050057     PISSN: 10120386     EISSN: 16629507     Source Type: Journal    
DOI: 10.4028/www.scientific.net/DDF.143-147.979     Document Type: Article

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