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Volumn 47, Issue 6, 2000, Pages 1214-1220

On the reverse short channel effect in deep submicron heterojunction MOSFET's and its impact on the current-voltage behavior

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DOPING (ADDITIVES); HETEROJUNCTIONS; SEMICONDUCTOR DEVICE MODELS; THRESHOLD VOLTAGE;

EID: 0033747812     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.842964     Document Type: Article
Times cited : (5)

References (10)
  • 7
    • 0031118622 scopus 로고    scopus 로고
    • Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's
    • B. Yu et al.Short-channel effect improved by lateral channel-engineering in deep-submicronmeter MOSFET's. IEEE Trans. Electron Devices, vol. 44, pp. 627-634, Apr. 1997.
    • IEEE Trans. Electron Devices, Vol. 44, Pp. 627-634, Apr. 1997.
    • Yu B1
  • 8
    • 18844480284 scopus 로고    scopus 로고
    • High-performance sub-0.08 ftm CMOS with dual gate oxide and 9.7 ps inverter delay
    • M. Hargrove et al..High-performance sub-0.08 ftm CMOS with dual gate oxide and 9.7 ps inverter delay. IEDM Tech. Dig., 1998, pp. 627-630.
    • IEDM Tech. Dig., 1998, Pp. 627-630.
    • Hargrove, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.