Strained Si/SiGe heterostructures for device applications

Solid State Electronics

Volumn 37, Issue 4-6, 1994, Pages 765-771

  Schaffler F ^a  

^a DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; CHARGE CARRIERS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; PHYSICAL PROPERTIES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES;

CARRIER MOBILITY; HETEROBIPOLAR TRANSISTOR (HBT); MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); SILICON BIPOLAR JUNCTION TRANSISTOR (BJT); STRAINED HETEROSTRUCTURE;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0028408149     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(94)90295-X     Document Type: Article

References (36)

1. Theory of a Wide-Gap Emitter for Transistors
2. Mobility Enhancement in Modulation-Doped Si-Si[sub 1−x ]Ge[sub x] Superlattice Grown by Molecular Beam Epitaxy
3. High-electron-mobility Si/SiGe heterostructures: influence of the relaxed SiGe buffer layer
4. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
5. p-type Ge-channel MODFETs with high transconductance grown on Si substrates
6. Comparison of mobility-limiting mechanisms in high-mobility Si1−xGex heterostructures
7. Magnetotransport measurements and low-temperature scattering times of electron gases in high-quality Si/Si1-xGex heterostructures
8. Enhancement mode n-channel Si/SiGe MODFET with high intrinsic transconductance
9. Operating CMOS after a Si-MBE process: a precondition for future three-dimensional circuits