Molecular beam epitaxy of GaN, AlN, InN and related alloys: From two- to three-dimensional growth mode

Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 506-511

  Daudin, B ^a   Feuillet, G ^a   Mula, Guido ^b   Mariette, H ^c   Rouviere J L ^a   Pelekanos, N ^a   Fishman, G ^c   Adelmann, C ^a   Simon, J ^a  

^a CEA GRENOBLE   (France)

^b INFM   (Italy)

^c CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; NUCLEATION; OPTICAL PROPERTIES; REACTION KINETICS; RELAXATION PROCESSES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; STRAIN;

ALUMINUM NITRIDE; GALLIUM NITRIDE; INDIUM NITRIDE;

NITRIDES;

EID: 0033746981     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(99)00220-4     Document Type: Article

References (28)

1. S. Chichibu, T. Azuhata, T. Sota, S. Nakamura, Appl. Phys. Lett. 69 (1996) 4188.
2. S. Nakamura, Science 281 (1998) 956.
3. K.P. O'Donnell, R.W. Martin, P.G. Middleton, Phys. Rev. Lett. 82 (1999) 237.
4. Y. Narukawa, Y. Kawakami, S. Fujita, S. Nakamura, Phys. Rev. B 59 (1999) 10283.
5. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, M. Arlery, J.L. Rouvière, Phys. Rev. B 56 (1997) R7069.
6. F. Widmann, J. Simon, B. Daudin, G. Feuillet, Y. Samson, J.L. Rouvière, N.T. Pelekanos, J. Appl. Phys. 83 (199) 7618.
7. F. Widmann, J. Simon, B. Daudin, G. Feuillet, J.L. Rouvière, N.T. Pelekanos, G. Fishman, Phys. Rev. B 58 (199) 15989.
8. H. Hirayama, S. Tanaka, P. Ramvall, Y. Aoyagi, in: ICNS'97, Proceedings 2nd International Conference on Nitride Semiconductors, Tokushima, Japan (1997) 427.
9. S. Tanaka, S. Iwai, Y. Aoyagi, Appl. Phys. Lett. 69 (1996) 4096.
10. H. Hirayama, Y. Aoyagi, S. Tanaka, MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G9.4.
11. K. Tachibana, T. Someya, Y. Arakawa, Appl. Phys. Lett. 74 (1999) 383.
12. F. Widmann, G. Feuillet, B. Daudin, J.L. Rouvière, J. Appl. Phys 85 (1999) 1550.
13. T. Zywietz, J. Neugebauer, M. Scheffler, Appl. Phys. Lett 73 (1998) 487.
14. F. Widmann, B. Daudin, G. Feuillet, N. Pelekanos, J.L. Rouvière, Appl. Phys. Lett. 73 (1998) 2642.
15. E.J. Tarsa, B. Keying, X.H. Wu, P. Fini, S.P. DenBaars, J.S. Speck, J. Appl. Phys. 82 (1997) 5472.
16. T. Shitara, J. Zhang, J.H. Neave, B.A. Joyce, J. Appl. Phys. 71 (1992) 4299.
17. B. Daudin, F. Widmann, J. Cryst. Growth 182 (1997) 1.
18. Yu Zhonghai, S.L. Buczkowski, N.C. Giles, T.H. Myers, M.R. Richards-Babb, Appl. Phys. Lett. 69 (1996) 2731.
19. J. Neugebauer, T. Zywietz, M. Scheffler, J. Northrup, Proceedings of 3rd International Conference on Nitride Semiconductors, Montpellier, France, 1999.
20. G. Mula, B. Daudin, P. Peyla, Proceedings of 3rd International Conference on Nitride Semiconductors, Montpellier, France, 1999.
21. C. Adelmann, J. Simon, N.T. Pelekanos, Y. Samson, G. Feuillet, B. Daudin, Proceedings of 3rd International Conference on Nitride Semiconductors, Montpellier, France, 1999.
22. B. Daudin, F. Widmann, G. Feuillet, Y. Samson, J.L. Rouvière, N. Pelekanos, Mater. Sci. Forum 264-268 (1998) 1177.
23. M. Arlery, J.L. Rouvière, F. Widmann, B. Daudin, G. Feuillet, H. Mariette, Appl. Phys. Lett. 74 (1999) 3287.
24. J. Tersoff, C. Teichert, M.G. Lagally, Phys. Rev. Lett. 76 (1995) 1675.
25. G. Martin, A. Botchkarev, A. Rockett, H. Morkoç, Appl. Phys. Lett. 68 (1996) 2541.
26. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. Lett. 79 (1997) 3958.
27. F. Bernardini, V. Fiorentini, D. Vanderbilt, Phys. Rev. B 56 (1997) R10024.
28. B. Daudin, F. Widmann, J. Simon, G. Feuillet, J.L. Rouvière, N.T. Pelekanos, G. Fishman, MRS Internet J. Nitride Semicond. Res. 4S1 (1999) G9.2.