Hydrogen and hot electron defect creation at the Si(100)/SiO2 interface of metal-oxide-semiconductor field effect transistors

Superlattices and Microstructures

Volumn 27, Issue 2, 2000, Pages 229-233

  Tuttle, Blair R ^a   McMahon, William ^a   Hess, Karl ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; CRYSTAL DEFECTS; CRYSTAL MICROSTRUCTURE; HYDROGEN; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICA;

DENSITY FUNCTIONAL THEORY (DFT); HOT ELECTRONS;

MOSFET DEVICES;

EID: 0033742002     PISSN: 07496036     EISSN: None     Source Type: Journal    
DOI: 10.1006/spmi.1999.0804     Document Type: Article

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