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Diamond and Related Materials

Volumn 9, Issue 3, 2000, Pages 975-981

Engineering low resistance contacts on p-type hydrogenated diamond surfaces

(5) Looi, Hui Jin a Pang, Lisa Y S a Whitfield, Michael D a Foord, John S b Jackman, Richard B a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF OXFORD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC RESISTANCE; GOLD; HYDROGENATION; INTERFACES (MATERIALS); METALLIZING; OHMIC CONTACTS; SEMICONDUCTING DIAMONDS; THERMAL EFFECTS; THIN FILMS;

SPECIFIC CONTACT RESISTANCE (SCR);

DIAMOND FILMS;

EID: 0033738961 PISSN: 09259635 EISSN: None Source Type: Journal
DOI: 10.1016/S0925-9635(00)00240-5 Document Type: Article

Times cited : (34)

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