Conduction band discontinuity and electron mobility in a strained Si/SiGe heterostructure

Applied Surface Science

Volumn 102, Issue , 1996, Pages 202-207

  Garchery, L ^a   Sagnes, I ^a   Badoz, P A ^a  

^a ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CHEMICAL VAPOR DEPOSITION; ELECTRON TRANSPORT PROPERTIES; ETCHING; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING;

CONDUCTION BAND DISCONTINUITY; STRAINED SILICON CHANNEL; TWO CARRIER TYPE HALL MODEL;

HETEROJUNCTIONS;

EID: 0030564794     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(96)00049-9     Document Type: Article

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